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domingo, 7 de febrero de 2010

Linearisation Issues in Microwave Amplifiers


Abstract —
The European Union has established the TARGET network of excellence (NoE) to focus on microwave power amplifier (PA) technology research. It aims to integrate the research resources comprised of many research groups covering the full range of expertise in PA technology. TARGET'S linearisation expertise covers leading edge researchers in classical and new linearisation techniques, including feedforward, predistortion, feedback and envelope elimination and restoration (EER), adaptive and non-adaptive, digital and analog, baseband, IF and RF, together with device, circuit and system modeling and behavioural analysis techniques. This paper reviews key linearisation issues to be faced in evolving linearisation solutions for future complex PA systems destined for a wide range of advanced wireless systems.

I. INTRODUCTION

Mobile wireless networks are evolving towards wider bandwidths, higher spectral efficiency (bits/Hz), using multi-level non-constant envelope modulation, NoCEM, schemes (e.g. M-QAM), at higher air-interface frequencies. Handsets, base stations, HAPs and satellites
– all types of access nodes– are already being required to handle air interface modes with high signal envelope crest factors (high peak to average power ratio, PAPR), and this requirement is set to become more serious with the hope of having simultaneous multi-band, multi-mode, including ultra-wideband (UWB) modes, [1], utilising a common transmit PA. For reduced in-band distortion and out-of-band emissions, the linearity requirements grow, and this especially applies to the RF PA. Typically the PA consumes over 70% of available stored energy in today's mobile handsets at power added efficiencies (PAE) of the order of 50% and less. Hence PA linearisation techniques, in enabling amelioration of in- band and out-of-band nonlinear PA impairment effects, are becoming increasingly important.

Behaviourally non-linearity is gauged by (a) the interference caused in the adjacent channels, typically given as an adjacent channel power ratio (ACPR) measure, and (b) the deterioration in modulation fidelity (MF) of the transmitted signal, typically measured as an error vector magnitude (EVM). As the same PA nonlinearity is the source of both problems, specifications for one may override that for the other, e.g. [2].
The typical PAE curve shows poor PAE performance with PA operation in the linear region but 'takes off' roughly and usually along a raised sine (RS) shaped curve as it moves into the nonlinear region. Linear operation by operating point backoff will be at the expense of PAE. Hence a lineariser which enables operation more into or through the RS region of the PAE curve is likely to be attractive, assuming acceptable performance-, and manufacturability-, cost ratios.

The standard static memoryless or quasi-memoryless [3] PA and lineariser characteristic models are effective at setting upper bounds to, and to some extent at predicting real, composite PA-lineariser performance as a function of percentage linearisation (PL) [4] and input power backoff and PAE values.
However, apart from the problems arising from incorrectly tuned bias circuits [3], SSPAs are extremely sensitive to temperature with self-heating effects impacting on their RF performance. It has been found in certain SSPAs, where large PAPR drive signals are applied, that the signal envelope can modulate the operating temperature. Then characterization of the nonlinearity, and thus of the impairments caused by this nonlinearity, becomes a dynamic matter. Linearisers seeking to offset SSPA nonlinearities will need to adapt dynamically. As RF operating frequencies go higher, up to 100GHz, and signal bandwidths become greater (>50MHz per single mode channel with a demand for simultaneous multimode channels) the challenge to find solutions becomes more urgent. An early step in this work is research into accurate measurement of self- heating [5] so as to better understand and characterise these effects. Research goals of temperature, time and space resolution for these measurements in TARGET are 5K, 2ns and 2Pm resp., [6].

II. ONGOING LINEARISATION RESEARCH

Research work happening in this field, and in the process of being integrated within the TARGET network, includes the following:

-a. General realisations of linearisation techniques, including integration of control components, into MMIC structures; some specific work in the 37-40GHz broadband is well underway in CoRiTeL. An efficient linearisation scheme, suited for MMIC implementation, has been demonstrated by the Politecnico di Torino (Polito), [7] providing nearly exact IM3 cancellation when linearising a 1W K-band PA.

b. The effect of device semiconductor characteristics (compound semiconductor, modulation-doped FET, electro-thermal effects in GaN-HEMTs etc.) on PA linearity, linearity memory effects, and efficiency is being investigated. It includes circuit level design methodologies such as those based on harmonic balance techniques. This effort is being led by the Fraunhofer Institute, the University of Stuttgart, and MiMEG - University of Rome (Tor Vergata).

c. Research into the design and realisation of adaptive linearisation schemes to match variations of PA characteristics manifesting transient memory effects due to adaptive power control techniques, operating temperature (including local and global self-heating), and ageing (a long term effect). This includes techniques such as digital adaptive predistortion, adaptive filters, neural networks, and Volterra series based methods. These digital techniques, by their nature, are realised at baseband and hold most promise in (the ever-broadening) narrowband systems. Headway is being made also for their use with the inclusion of compensation for memory effects, e.g. UMTS,[8]. Cross fertilisation in this field of research among TARGET partners such as Polito, University of Bologna (Unibo-DEIS), Technical University of Vienna (TUW-INTHFT), University College Dublin (UCD), Universitat Politecnica de Catalunya (UPC) and University of Limerick (UL) is underway.

d. Analytic techniques to assess impact of levels of linearisation on system parameters (UL) and general evaluation of classical lineariser structures – UPC, CNRS
- LAAS, CoRiTeL and others.

III. TARGET REVIEW OF LINEARISATION

With a view to greater integration and focus of network resources, TARGET is supporting a comprehensive review of techniques, designs, models, and algorithms for linearisation systems, circuits and devices. This will contribute also to establishing clarity in respect of characterisation, memory and adaptability issues, and clear means of objective evaluation and comparison. The focus is proactive in that linearisation improvement goals over the lifetime of TARGET have been set down.

The theory, principles and techniques of PA linearisation have been evolving since the early days of wireless transmitters. Techniques include predistortion, feed-forward, direct and indirect feedback techniques, envelope elimination and restoration (EER), polar loop, Cartesian loop, and other cancellation methods. System and circuit attributes that have to be considered include – dynamic/static; adaptive/non-adaptive; baseband/RF; memoryless/memory-effects tracking and compensation. Other issues that have to be addressed include simulation and analysis, and performance measurement, at various levels (device circuit system, and behavioural); implementation issues – complexity, stability, robustness, reliability, energy efficiency, size, weight, thermal considerations and cost.
In general, there is no 'best' linearisation technique. The method used to linearise a PA should be the optimum for the particular system being designed taking into account frequency, modulation method and bandwidth. Internationally and within Europe much of the focus of linearisation research is on the first two techniques – predistortion and feed-forward - as holding promise for successful adaptation to upcoming advanced wireless communication systems. TARGET's effort however will be to combine research strengths to seek linearisation solutions across a wide range of systems, but with special emphasis on wideband systems and solutions which respond to the dynamic characteristics encountered in new SSPA materials being investigated which manifest multifactorial transient effects, e.g. in self-heating and memory.

IV. TYPES OF LINEARISATION

Negative feedback has been widely employed at low frequencies but can also provide linearisation if applied directly to the amplifier in the form of RF feedback, envelope feedback or harmonic feedback e.g.[9, 10]. The use of negative feedback at high frequencies has been limited by unavoidable parasitic and time-delay effects, leading to instability problems. This problem can be effectively circumvented for narrow bandwidth applications with careful design. However for wider band modern and future systems feasibility, stability and robustness problems will slow and constrain the evolution of feedback linearisation [9, 11].

Detection, and avoidance of, undesired instabilities is possible in medium-power PAs working under different bias, frequency or power conditions. For instance techniques have been reported [12], which help optimise the feedback loop, thus avoiding spurious oscillations and opening up new perspectives for feedback linearisation strategy design. Preliminary studies on the application of stability analysis techniques to the design of a L-band medium-power bipolar amplifier with passive feedback have demonstrated encouraging results [13]. Fig.1 shows the ACPR improvement provided by the optimisation of the passive feedback loop, guaranteeing the amplifier stability over its whole power range. The excitation is a QPSK signal and different symbol rates have been considered. Simulations show improvements for symbol rates not exceeding 20MHz.

Circuit-level predistortion and feedback: H-infinity design optimization theory applied to feedback linearisers is another new approach, [14], presently being found to improve classical feedback results. The linearisation systems are designed according to the model reference structure, have good closed loop robustness, and do not require detailed information about the PA, rather only a simple bound on the nonlinearities is necessary.
Hyper-stable design of linearisers, implementable in analog circuitry or through DSP, [15], is another new technique under investigation within TARGET capable of tolerating significant PA parameter variations.
Other feedback linearisation issues include dynamic power supply, active bias and thermal compensation; the former being more directed at power efficiency rather than linearisation.
Feedforward techniques [16, 17] for the most part rely


Fig.1 ACPR improvement on a L-Band bipolar PA using passive feedback under QPSK excitation with symbol rates: 10, 20 and
30MSymbols/s.

on automatic compensation loops based on analog solutions, and digital adaptive compensation - LMS and gradient-like based methods, correlative algorithm, and such like. Besides development of the theoretical support, issues include the effects of imbalances and imperfect cancellation, stability, controller loop and optimising algorithm, e.g. [18-20].

Predistortion techniques are viewed as of greatest importance because of their likely wideband application [21]. The success of predistortion relies on the accuracy of the PA characterization and the generation of an equivalent cancelling characteristic. To date the approach has been to assume quasi-static and memoryless approximations for the PA characteristics. Generally the interaction between the nonlinearities present in both the predistorter and amplifier, and the noticeable memory effects, make the design and optimisation of the predistorter an involved and critical task. Techniques include RF, IF, baseband digital and analogue predistortion, e.g. [11, 22]. Of key importance here is achieving real-time inverse adaptable dynamical modeling of the PA, with memory effects accounted for, whether they be based on Volterra, (e.g. [23, 24]) Wiener, Chebyschev, Bessel, Taylor, Saleh, or on other models.

For wideband systems RF predistorters based on diode or transistor devices [8, 9, 11] seem likely candidates. Focusing on third-order intermodulation distortion (IMD3) in a combined predistorter-PA, three main mechanisms contribute to the final result: envelope, second harmonic and third degree [24]. The pure third degree contribution is the obvious way to generate third- order intermodulation products. The envelope mechanism refers to the mixing of two fundamental frequencies in a given even-degree nonlinear element followed by a new mixing with a fundamental in other even-degree nonlinearity. The second harmonic mechanism involves the generation of the second harmonic of a fundamental frequency in an even-degree nonlinearity and a new even-degree mixing with another, different, fundamental. Most of the nonlinearities present in the devices contain even-degree components and, as a consequence of the envelope and second harmonic mechanisms, the linearisation performance depends not only on the in- band behaviour of both amplifier and predistorter, but also on the out-of-band impedances, thermal and trap effects, etc.,[24, 25].
In conclusion, the complex nonlinear phenomena and short- and long-term memory effects are issues to be considered carefully in order to optimise the lineariser performance. For instance optimisation of the predistorter circuit and low-frequency impedances in both the predistorter and PA needs to be carried out in order to improve the IMD3 performance over a broad frequency band. Figure 2 shows measurement results on a L-band bipolar PA, using two different diode-based predistorter circuits, c.f.[24].

Other techniques, which some might categorise among the types already mentioned, include EER, linear amplification using nonlinear components (LINC), combined analogue-locked loop universal modulator (CALLUM). Data predistortion, displays good in-band results but still needs further research to analyse ACI effects. There are also pseudo-linearisation techniques e.g. power combiners and Doherty amplifiers, [26].

V. ADAPTIVITY

To get the most benefit from the lineariser it should be matched to the particular amplifier. However the amplifier characteristics will vary - intended e.g. with bias point under transmit power control protocol, or unintended e.g. the self-heating effects mentioned above or PA tolerances in their fabrication. Adaptability of the linearisation characteristics to match PA variations, and the capturing of suitable control signals for this adaptation, is an important area of research. (Linearisers that do not adapt or adapt poorly could of course add to the nonlinearity problem rather than ameliorate it!) Here all the challenging issues of measurement of device characteristics, especially of memory and thermal effects, together with their multi-level model design are present, e.g. [3, 7]). As an example of modeling work in this context, a solution of the coupled electrical and thermal model has been demonstrated in the frequency domain through harmonic balance simulations [7]: Fig. 3 shows the DC thermal collapse of a power HBT with one input tone at different frequencies. A dispersive effect is visible in the nonlinear device behavior. Similar analysis can be carried out with multiple tones.

VI. EVALUATION CRITERIA AND STANDARDS

Linearisation evaluation criteria and standards also need to be looked at with a view to establishing some harmonious benchmarking techniques. Common measures of nonlinearity include 1dB compression point, and 2nd and 3rd order intercept points. From the behavioural viewpoint, deterioration of EVM of the MF of digitally modulated signals and the level of ACI, usually measured as ACPR, are key measures. Lately, new relative measures of linearisation, PL and percentage linearisation area (PLA) have been introduced and linked
to the behavioural measures. These enable comparison
between different linearisation techniques as well as the setting of design goals for linearised PAs.

VII. CONCLUSIONS

TARGET sees linearisation techniques at circuit and system levels as having become today a key research

Fig 2. IM3 Vs offset frequency w.r.t. the carrier, for PA alone (•),
and with 1- diode (() and 2-diode ( ) predistorters.


Fig. 3 Dispersive effects due to thermal coupling on the DC HBT
output characteristics and on the HBT thermal collapse.

issue for modern evolving advanced wireless transmitters from embedded mobile and handheld terminals, to base stations, HAPs and satellites. A key driver is  competing requirement of improved signal fidelity and PA system PAE in contexts of single and multicarrier NoCEM air- interface modes to simultaneous multimode transmitter systems. At present, solutions offer finite though modest linearity behavioural improvements, which are a function of the air-interface mode. Their adequacy depends on the context but they can help achieve linearity goals when working  together  with  other  options.    Nevertheless, different practical problems –many of which have yet to be fully understood and characterised such memory effects, self-heating effects, interaction between non- linearities    and    stability    issues–    reduce    potential performance.

ACKNOWLEDGEMENTS

TARGET network of excellence project, European Union, EU-FP6-IST-2004-507893, www.target-net.org, especially    colleagues    in    TARGET's    linearisation evaluation map workpackage.

REFERENCES

[1]  M. S. O'Droma, "Wireless, Mobile and Always Best Connected,"  IEEE  Communications  Magazine  &  GCN, vol. 42, pp. 29-2, 2004.
[2]  M. O'Droma and N. Mgebrishvili, "On quantifying the benefits of SSPA linearisation in UWC-136 systems," To
be published in IEEE Trans. on Signal Processings, 2004.
[3]   W. Bosch and G. Gatti, "Measurement and simulation of memory effects in predistortion linearizers," IEEE Trans. MTT, vol. 37, pp. 1885-1890, Dec. 1989.
[4]  M. O'Droma, N. Mgebrishvili, and A. Goacher, "New percentage linearization measures of the degree of lineari-zation   of   HPA   nonlinearity,"   IEEE   Communications Letters, vol. 8, pp. 214-216, 2004.
[5]  P. Bianco, S. Donati Guerrieri, G. Ghione, M. Pirola, C. U. Naldi, C.  Florian, G. Vannini, A. Santarelli, F. Filicori, L. Manfredi,   "Optimum   design   of   a   new   predistortion scheme    for    high    linearity    K-band    MMIC    power amplifiers",  GAAS 2001, pp. 689-692, London, UK, Sep. 2001.
[6]   G. Magerl, M. S. O'Droma, F. Giannini, T. J. Brazil, G.
Manes, A. Cidronali, A. Mediavilla, R. Makri, W. Richter, J. P. Teyssier, M. Mayer, P. Colontonio, D. Schreurs, et al.,  "Top  amplifier  research  group  in  a  European  team (TARGET) - NoE Description of Work. Annex I". EU- FP6-IST-2004-507893, www.target-net.org. 2004.
[7]   F. Cappelluti, F. Bonani, S. D. Guerrieri, G. Ghione, M. Peroni, A. Cetronio, and R. Graffitti, "A new dynamic,self-consistent electro-thermal model of power HBTs and a novel interpretation of thermal collapse loci in multi- finger devices," IEEE Conference on Custom Integrated Circuits, pp. 397-400, May 2001.
[8] J.Kim and K.Konstantinou, "Digital predistortion of wideband signals based on power amplifier model with memory,"Electronics Letters, vol.37, pp.1417-1418, Nov.
2001.

Asignatura: CRF
Dujeiny J. Sánchez Q.

Extraido de:
  biblioteca.universia.net/html_bura/ficha/.../3997056.html


DISEÑO DE LNA CON MMIC


El objetivo de este documento es mostrar una guía de los principales aspectos que hay que tener en cuenta a la hora de diseñar un Amplificador de Bajo Ruido o LNA (Low Noise Amplifier).

Además se tratará de resumir el proceso de diseño en varias fases perfectamente diseñadas: Elección del LNA, cálculo de los parámetros y características básicas de un LNA, y estudio de las ventajas de un LNA.

Para ello se ha tomado como referencia el artículo "GPS low-noise amplifier design made easy with MMIC" realizado por Eric Chan, pero se ha optado por hacer un estudio general de cualquier LNA y no el modelo descrito en dicho artículo. De esta manera aparecerán muy pocas referencias al modelo MGA-61563 de Agilent Technologies.

Introducción

Según el artículo, hemos de tener numerosos aspectos a la hora de diseñar un LNA de forma que podamos obtener las mejores prestaciones. Se nos comenta que las soluciones discretas eran las preferidas para este tipo de circuitos debido a que nos aportaban unas figuras de ruido (NF) muy bajas.

En contrapunto a este aspecto, las soluciones basadas en los nuevos circuitos MMIC ofrecen capacidades de ruido comparables además de otras ventajas como:

- Linealidad
- Simplificación del diseño teniendo en cuenta las PCB bias
- Simplificación a la hora de adaptar impedancias
- Estabilidad
- Tamaño
- Menor ciclo de diseño

A continuación explicamos los aspectos que nos han parecido más interesantes para el diseño de un LNA competente usando tecnología MMIC. Además de intentar dar una pequeña orientación o modelo sobre los pasos a seguir a la hora de diseñar un LNA

Paso 1.- Elección del LNA

Antes de ponernos a diseñar los parámetros deberemos hacer un estudio de los requisitos que deseamos alcanzar con nuestro LNA. Una vez hecho esto deberemos abordar dos puntos importantes: la elección del diseño a seguir y contemplar la posibilidad de usar soluciones monolíticas.

Elección del Diseño del LNA

El diseño de amplificadores, para aplicaciones de microondas, se pueden orientar para obtener la máxima transferencia de potencia entre la entrada del sistema y su salida. O bien optar por el diseño de mínimo ruido. Ambas formas de proceder están estrechamente ligadas a los parámetros S que presente el dispositivo activo que se vaya a emplear.

DISEÑO DE LNA CON MMIC

Bien se considere un dispositivo discreto, bien se opte por un dispositivo de tecnología MMIC, la estabilidad del mismo vendrá determinada por los parámetros S a la frecuencia de trabajo. Si se asegura la estabilidad incondicional, el diseño para máxima transferencia de potencia es factible, alcanzando la adaptación compleja conjugada simultáneamente en la entrada y en la salida del sistema. Ante esta situación la ganancia disponible será máxima, y se denomina MAG (Maximum Available Gain).

Para el diseño de mínimo ruido, se persigue que el aporte de ruido a la señal de entrada sea el menor posible, para ello, y en función de los parámetros de ruido ofrecidos por el fabricante del dispositivo activo, se adapta la entrada del sistema en función del coeficiente de reflexión de mínimo ruido, denotando como гopt. Este coeficiente está relacionado con la resistencia de mínimo ruido, que no coincide con Z0. En este caso, existe una desadaptación en el plano de entrada del amplificador, se empeora por tanto la transferencia de potencia, pero se disminuye el ruido añadido a la señal.

Existe por tanto un compromiso a la hora de realizar el diseño de un amplificador de microondas; ya que ambas formas de diseñar no se pueden llevar acabo de forma simultánea.

Barajar el uso de soluciones Monolíticas

Las características de los sistemas que operan en las bandas de RF y Microondas pueden ser optimizadas mediante la integración de componentes en MMIC (Microwave Monolithic Integrated Circuits). Es corriente usar componentes "off the shelf" pero a costa de aumentar la complejidad y el coste del diseño. El uso de componentes MMIC es un medio rápido y efectivo en coste. Sin embargo cuando se trata de diseñar MMICs a medida hay que tener en cuenta que su coste y tiempo de desarrollo son importantes por lo que solo en casos de grandes series o en aplicaciones especiales como en espacio, es aconsejable.

Mediante el uso de soluciones MMIC a medida se pueden mejorar las características del sistema, así como la funcionalidad y fiabilidad. Además se reduce el número de componentes,el tamaño del circuito, peso y consumo de potencia, así como los tiempos de ensamblado.

Todo esto puede llevar a los fabricantes a la utilización de sistemas híbridos, aumentando así su capacidad de respuesta a la velocidad del mercado a costa de pérdida de prestaciones en la figura de ruido. Esto se realiza hasta que se obtienen unos niveles mínimos en la figura de ruido.

Paso 2.- Calculo de los parámetros y características básicas del LNA

El segundo paso que abordaremos será el cálculo de los parámetros básicos de cualquier LNA y que nos ayudarán a alcanzar los objetivos marcados al inicio del diseño. Además, estos parámetros son la base de nuestro LNA y sin ellos no podremos completar el proceso de diseño y fases posteriores. Estos parámetros son:

Adaptación de Impedancias

El teorema de transferencia de máxima potencia establece que la transferencia de potencia de una fuente dada a una carga es máxima cuando la resistencia de la carga es igual a la de la fuente. La adaptación de impedancias es trascendental en sistemas de alta frecuencia.

Por ejemplo en un transmisor operando a frecuencias de microondas, constituido (entre otros elementos) por un generador, una guía de ondas y una antena. Si la guía de ondas y la antena no están adaptadas, una parte de la potencia incidente en la antena se reflejará y creará una onda estacionaria en la guía. Si la desadaptación es apreciable, y la potencia transmitida es suficientemente alta, la fuente puede dañarse por la onda reflejada. En la práctica se utilizan adicionalmente protecciones entre la fuente y la guía de ondas, de modo que señales reflejadas desde la carga sean atenuadas.

Sin embargo no se debe pensar que, en todas las situaciones, lo ideal es que las impedancias de la fuente y de la carga estén adaptadas.

Tomemos como ejemplo el de un emisor de radio conectado a la antena a través de un cable. Si la adaptación del cable a la antena es deseable (para que no hayan ondas reflejadas), es mejor evitar la adaptación del cable al emisor. Si el emisor estuviese adaptado, la mitad de la potencia generada por el emisor se perdería en la resistencia interna de este último. Lo mejor es que la resistencia interna del emisor sea lo más pequeña posible.

Hay casos en los que la adaptación es imposible como en el de los teléfonos móviles: Como la impedancia de la antena depende la posición de la cabeza y de la mano del utilizador, la adaptación en todas circunstancias es imposible. Pero eso no les impide de funcionar.

En la Ilustración 1 se muestra la adaptación a la entrada ha de estar sintonizada para presentar Ropt a la entrada del amplificador (se adapta con una inductancia).


Ilustración 1.- Ejemplo de adaptación de entrada

Pérdidas de Retorno

Si la impedancia de carga no es igual a la impedancia característica de la línea, se producirán reflexiones, es decir, parte de la energía que llegue a la carga será absorbida por esta, y parte se reflejará. Definimos como pérdidas de retorno a la relación en dB entre la onda reflejada y la onda incidente:

RL=20*log(Vr/Vi)

Donde:

RL= Pérdidas de retorno en db.

Vr= onda de tensíon reflejada.

Vi= onda de tensión incidente.

Relacionándolas con los parámetros S:

Pérdida de retorno a la entrada:

RLin=|20Log(|S11|)|

Pérdida de retorno a la salida:

RLout=|20Log(|S22|)|



Ilustración 2.- Ejemplo de Pérdidas de Retorno

Mejora de las Pérdidas de Retorno

Podemos acercar S11 a la impedancia de entrada del amplificador para mejorar las pérdidas de retorno a cambio de un empeoramiento en la NF.

Como en el caso de la adaptación conjugada, en la que se obtiene la máxima potencia de salida, también aquí, acortar la distancia acercando el factor S11 al amplificador haciendo que las pérdidas de retorno sean menores, supone un empeoramiento en la relación NF, y habría que estudiar si esta mejora en la ganancia merece el aumento de ruido a la hora de diseñar un amplificador de bajo ruido MMIC.

Figuras de Ruido

La magnitud del ruido generado por un dispositivo electrónico, por ejemplo un amplificador, se puede expresar mediante el denominado factor de ruido (F) ó figura de ruido, que es el resultado de dividir la relación señal a ruido en la entrada (S/R)ent por la relación señal/ruido en la salida (S/R)sal, cuando los valores de señal y ruido se expresan en números simples.

Sin embargo, como los valores de relación señal/ruido suelen expresarse en forma logarítmica, normalmente en decibelios, el factor de ruido en decibelios será, por tanto, la diferencia entre las relaciones S/R en la entrada y en la salida. Para calcular el factor de ruido equivalente de una serie de dispositivos en cascada, se usa la fórmula de Friis:

F=F1+(F2-1)/G1+(F3-1)/G1G2+....+(Fn-1)/G1G2G3...Gn-1

Ganancia

En lo referido a señales eléctricas es una magnitud que expresa la relación entre la amplitud de una señal de salida respecto a la señal de entrada. Cuando la ganancia es negativa (menor que 0 en dBs, o entre (0,1) en unidades naturales), hablamos de atenuación.

Si recordamos algo de parámetros S, podemos relacionar la ganancia con éstos:

S21 es la ganancia de transmisión directa con la salida terminada en carga adaptada.
S12 es la ganancia de transmisión inversa, con la entrada terminada en carga adaptada.
Red sin pérdidas (ganancia unitaria): S21 = 1


Ilustración 3.-Ejemplo de Ganancia

Paso 3.- Estudio de las ventajas del LNA

Como hemos comentado en la introducción, todo LNA tiene diversas ventajas que dependiendo de las funciones a las que esté destinado desarrollará de diferente manera. En este apartado vamos a estudiar los diferentes métodos o modelos para variar esas características o ventajas, y así, poder ajustar nuestro LNA al trabajo al que lo destinemos.

En referencia a la RELACIÓN SEÑAL-RUIDO (NF)

Sintonización del amplificador para minimizar la NF

Si estamos hablando de amplificadores de bajo ruido, compuestos por MMIC, es obvio dar por supuesto que el amplificador tendrá que estar sintonizado para que los transistores y componentes sean los que sean estén operando en las bandas adecuadas de trabajo que produzcan en el circuito completo, la mejor relación NF, es decir los cálculos del circuito se habrán de realizar conforme a las características de las especificaciones, pero produciendo el menor ruido/interferencias posible.

Ya que estamos diseñando un amplificador de Bajo ruido, compuesto por componentes monolíticos (MMIC) que además de resultar más fáciles a la hora del diseño para los amplificadores, también producen buena relación señal a ruido en los diseños y siendo esta una de sus características principales.

Para sintonizar un amplificador hay que tener en cuenta (según especificaciones):

- La frecuencia mínima y máxima de operación
- NF (que es la que queremos mejorar)
- Ganancia
- Estabilidad de la ganancia en la banda de operación
- Máxima potencia de salida a 1 dB de la saturación
- Máxima potencia de entrada sin daño
- Puntos de trabajo de los transistores
- VSWR Entrada
- VSWR Salida

Adaptación Conjugada

Si la NF no es demasiado importante podemos buscar adaptación conjugada para maximizar la ganancia (Gopt y S11 lejos del centro de la carta de Smith). La adaptación conjugada quiere decir que la impedancia de carga debe ser la conjugada de la impedancia de la fuente.

Zr=Zt*

Por esta razón a la condición de máxima cesión de potencia se le llama, a veces, Adaptación conjugada.
La adaptación conjugada exige que tengamos un circuito resonante. Las reactancias se contrarrestan totalmente (condición de resonancia) y entonces igualamos las partes reales. Al introducir en la siguiente ecuación las condiciones de esta adaptación en el circuito obtenemos que la máxima potencia es:

P_med_maxima=|Vr|^2/8Rt

Todo esto se realizaría en los cálculos mediante la carta de Smith, y los parámetros S, a la hora de adaptar la impedancia de carga en el circuito de nuestro amplificador de bajo ruido. Esto se realiza como una mejora de la ganancia del circuito a coste de un empeoramiento en la relación NF, como suponemos más importante el ruido del amplificador no sabemos hasta qué punto maximizaremos la ganancia a coste de un empeoramiento de la NF, luego habría que estudiar si a costa de un bajo incremento del ruido el aumento de la ganancia es suficiente como para que resulte deseable en cada caso.

En referencia a la ESTABILIDAD

Estudio de las PCB bias

Tener en cuenta el efecto de las PCB bias que harán que la estabilidad del amplificador no sea ideal. Las PCB bias actúan como condensadores, estos hacen que la estabilidad del amplificador sea real introduciendo impedancias complejas y haciendo que el funcionamiento de los transistores se aleje de lo teórico y se comporte de manera real, variando su funcionamiento según varia la frecuencia de trabajo, ya que los condensadores, en el caso de frecuencias de microondas con las que estamos trabajando(es decir a frecuencias muy altas) introducirán cambios de comportamiento en el amplificador.

Esto siempre tiene que ser contemplado en la banda de trabajo del circuito, a la hora del diseño, y el efecto en concreto de las PCB Bias no deberá influir en el funcionamiento de nuestro amplificador para las frecuencias deseadas, habrá que ver que cambios producen y minimizarlos, en todo caso.

Búsqueda de un MMIC con F min y S ss cercanos al centro de la carta de Smith

Para diseñar circuitos amplificadores de microondas, particularmente con transistores condicionalmente estables, no es posible conseguir simultáneamente máxima ganancia, mínimo ruido y máxima adaptación. Por lo tanto es necesario un compromiso entre estos parámetros, garantizando siempre la estabilidad.


Ilustración 4.- Regiones estables de la Carta Smith


Generalmente durante el diseño de un amplificador condicionalmente estable es necesario dibujar los círculos de estabilidad del transistor y comprobar que los coeficientes de reflexión de las redes de entrada y salida diseñadas se encuentran en zona estable en la carta de Smith.

DISEÑO DE LNA CON MMIC


En referencia a la LINEALIDAD


Punto de compresión a 1dB

Otros de los puntos que debemos estudiar para conseguir que nuestro LNA sea lineal es el punto de compresión a 1dB y el nivel mínimo de señal detectable. Estos dos puntos nos marcaran el rango dinámico de trabajo.

El punto de compresión a 1 dB es el valor de entrada donde nuestro amplificador entra en saturación disminuyendo la ganancia de potencia a la salida (Pout,1dB) en 1dB respecto a la ganancia en pequeña señal. El valor mínimo detectable de la señal de entrada será, a su vez, el mínimo valor de señal que pueda registrar el amplificador y que producirá el nivel de señal amplificada más pequeño (Pout,mds) producido por el LNA.

Una vez calculados estos puntos, podremos calcular el rango dinámico (dR) del LNA. Este rango viene dado por la siguiente expresión.

dR = Pout,1dB - Pout,mds

Así obtendremos la región de trabajo dónde la potencia de salida del LNA será lineal.

Ilustración 5.-Punto de Compresión 1dB


Hay que notar, que en la mayoría de los casos, al diseñar un LNA se tiene que el punto de compresión a 1dB es uno de los prerrequisitos a cumplir. Por tanto, es uno de los parámetros más importantes del dispositivo. Para conseguir el P1dB se suele colocar una inductancia en la realimentación de la red secundaria además de una resistencia.

Punto de intercepción de tercer orden (IP3)

El punto IP3 es el parámetro utilizado normalmente para indicar la linealidad de un LNA. Por tanto, nos interesa que este parámetro sea lo más alto posible porque nos proporcionará una mayor linealidad.

La definición del IP3 es el punto donde el producto de intermodulación de tercer orden intercepta o corta a la componente fundamental del circuito del LNA perfectamente lineal. Este punto suele significar el margen superior del rango dinámico de trabajo.

Ilustración 6.-Punto de Intercepción de 2 y 3 orden

Este punto viene dado por: IIP3[dBm] = OIP3[dBm] – Gain[dB].  Donde IIP3 es el punto de intercepción de orden 3 de entrada, OIP3 es el punto de interceptación de orden 3 de salida y Gain es la ganancia.

Por tanto, la utilización de este parámetro permite predecir los efectos de intermodulación, que suele ser un factor determinante a la hora de calcular el nivel máximo de salida que puede alcanzar un amplificador. Suele venir dado en función de la potencia de entrada y la ganancia. O bien, se puede calcular mediante la comparación de dos tonos puros muy cercanos en frecuencia.

DISEÑO DE LNA CON MMIC


En referencia al NÚMERO DE COMPONENTES


Reducción del Número de Componentes

La reducción del número de componentes implica una reducción del tamaño del dispositivo permitiendo su implementación en aparatos de menor tamaño. Esto se traduce en una mayor compactibilidad y portabilidad de los componentes para dispositivos móviles.

Junto a esto, tenemos que tener en cuenta que las dimensiones reducidas favorecen la fabricación en grandes cantidades. Debido a que es más sencillo diseñar menor número de componentes y fabricarlos.

Ilustración 7.- Componentes de un LNA

Conclusión

Hemos tratado de indicar unos pasos a tener en cuenta en todo diseño de LNA para facilitar su calculo, diseño y su posterior fabricación con las máximas prestaciones que nos podamos permitir. Por tanto, podemos resumir que para diseñar  un  LNA  debemos  basarnos  en  tres pasos   principales:   Elegir   el   LNA   que   nos marcará todo el diseño posterior, estudiar los parámetros básicos que regirán el LNA, y los métodos de variación de características del LNA para   adaptarnos  a   los   diferentes  entornos donde desarrollará su actividad el amplificador.
 
Asignatura: CRF
Dujeiny J. Sánchez Q.

Extraido de:  javidecas.blogspot.es/img/LNA.pdf

CARACTERIZACIÓN ELECTRO- TÉRMICA DE AMPLIFICADORES MMIC DE POTENCIA

CARACTERIZACIÓN ELECTRO- TÉRMICA DE AMPLIFICADORES MMIC DE POTENCIA


I INTRODUCCIÓN
Los transmisores de potencia de estado sólido (para una gran variedad de aplicaciones radar y de comunicaciones) están normalmente formados por una cadena de amplificadores monolíticos de microondas (MMICs) de potencia, debido a sus prestaciones, versatilidad, tamaño..., frente a otros dispositivos de potencia. Para garantizar el correcto funcionamiento de los sistemas completos en términos de su fiabilidad es necesaria una caracterización térmica de los amplificadores de potencia que incluya su estructura de montaje [1]. El comportamiento de los amplificadores MMIC de potencia depende fuertemente de la temperatura interna que alcancen los transistores que losconforman. El método de caracterización térmica empleado no debe dañar los amplificadores ni hacerlos operar bajo condiciones de trabajo no usuales, y además debe ser capaz de proporcionar la temperatura interna de los transistores incluyendo los efectos de montaje de los MMICs. Un método de caracterización térmica como el descrito anteriormente fue presentado en [2, 3]. Con el fin de estudiar con mayor profundidad el comportamiento interno de los MMICs de potencia (por ejemplo para localizar posibles hot spots dentro del MMIC bajo determinadas condiciones de polarización y temperatura ambiente) la simulación térmica, asumiendo un perfil de potencia disipada constante para todos los transistores que integran el MMIC de potencia, puede no resultar suficientemente precisa. En esos casos es necesario contar con modelos que relacionen, para unas determinadas condiciones de polarización, la corriente circulando a través de los transistores con la temperatura a la que se encuentran los mismos. Dichos modelos hacen uso por un lado de un modelo eléctrico, capaz de proporcionar la corriente en un transistor en función de su temperatura interna, y por otro de un modelo térmico, que calcula, a partir de las potencias disipadas en cada transistor las temperaturas internas a las que se encuentran [4, 5].
En este artículo se describe la obtención de un modelo electrotérmico para un amplificador MMIC comercial de potencia (P1dB=30.0dBm) en banda X. Dicho modelo es capaz de predecir con exactitud la corriente del MMIC (IDMMIC) para un rango amplio de puntos de polarización y de temperaturas ambiente.

II. CARACTERIZACIÓN TÉRMICA

El MMIC de potencia fue caracterizado térmicamente empleando el método propuesto en [1]. Dicho método utiliza como parámetro eléctrico indirecto dependiente de la temperatura (TSP) la corriente de drenador de la primera de las etapas de amplificación de que consta el MMIC (ID1). ID1 se emplea para obtener experimentalmente una medida del acoplamiento térmico entre las dos etapas en que se divide el MMIC, para ello se hace uso de una serie de curvas de calibración medidas:

I D1 = f (VD1 ,VG1 , TAMB )

Estos datos experimentales se emplean para determinar los parámetros no conocidos de la geometría del MMIC bajo estudio (básicamente la altura de la capa de epoxy empleada para fijar el amplificador a su carrier metálico). Una vez se conocen la geometría del MMIC y de su montaje, así como sus propiedades térmicas, se simula el comportamiento del amplificador empleando el simulador térmico propuesto en [6], asumiendo un perfil de potencias disipadas constante para todos los transistores que integran el MMIC, para obtener el perfil de temperaturas en la superficie del amplificador para unos puntos de polarización y temperatura ambiente concretos.

III. MODELO ELECTRO-TÉRMICO

Con ayuda de la información sobre el comportamiento térmico del MMIC experimentalmente obtenida mediante el método propuesto en [1], se derivó, para el transistor FET que forma las dos etapas del MMIC (12 transistores en
paralelo para la etapa de entrada y 28 para la de salida), un modelo de corriente de drenador en función de su temperatura interna:

I DFET = f (VDFET ,VGFET , TFET )

El modelo proporciona la corriente de drenador de un FET IDFET para el siguiente rango de puntos de trabajo:
• Tensión de drenador (VDFET) entre 6.0V y 9.0V.
• Tensión de puerta (VGFET) entre –1.2V y –0.8V.
• Temperatura interna de las fuentes de calor (temperatura interna de los transistores FET) entre 50ºC y 140ºC.

Mediante (2) es posible finalmente obtener un modelo electro-térmico para simular el comportamiento en un determinado punto de operación del amplificador MMIC completo.

El modelo electro-térmico se obtuvo siguiendo los pasos que se detallan a continuación:

• Estructura física del MMIC y su montaje caracterizada mediante el método propuesto en [1].
• Una vez que el comportamiento térmico del MMIC ha sido medido, cada una de las curvas de calibración de la etapa de entrada del MMIC dadas por (1), son modificadas de tal manera que la temperatura TAMBi de cada punto de las curvas se transforma a su correspondiente TFETi, realizando un promedio de la temperatura interna sobre las superficies de los transistores de la primera etapa. De la misma forma la corriente total de drenador de la etapa de entrada ID1 se promedia por el número de transistores FET de dicha etapa (12 en el caso particular del MMIC bajo estudio) para obtener para cada punto de (1) IDFETi. Así las curvas de calibración del TSP quedan como sigue:

Fig. 1. IDFET , VDFET=9.0V y VGFET=-0.911V como función de la
temperatura interna individual de una sola fuente de calor (FET).

El paso anterior se repite para cada una de las curvas de calibración del TSP (j) para cada (VD1j, VG1j), de tal manera que la corriente de drenador IDFETij se obtiene para diferentes (VD1j, VG1j, TFETij):

I DFETij = f (V D1j, VG1j, TFETij)

• A continuación pueden emplearse diferentes modelos de corriente de drenador de DC en función de la temperatura ID(T), como los propuestos en [7, 8, 9], para realizar el ajuste de
los datos proporcionados por la expresión (3). Este proceso se realiza optimizando los parámetros de ajuste del modelo empleado (notar que dicho ajuste se realiza exclusivamente sobre datos experimentales obtenidos de la caracterización de la etapa de entrada del amplificador). En el caso del presente trabajo se empleó un modelo de corriente de drenador dependiente de la temperatura similar al indicado en [9].
• El modelo cuyos parámetros han sido ajustados en el paso anterior se aplica a todos los transistores individuales que forman el MMIC completo. Dicho modelo se acopla al simulador térmico propuesto en [6] para obtener finalmente la corriente de drenador total del MMIC (IDMMIC) para una temperatura ambiente dada (TAMB) y para un punto de polarización concreto (VD, VG). El cálculo de IDMMIC se realiza siguiendo el proceso descrito en el diagrama de flujo de la figura 2.


Fig. 2. Proceso de cálculo de IDMMIC. N es el número total de fuentes de calor
 (transistores), 40 en el caso del MMIC bajo estudio. i representa cada fuente

de calor individual y q el número de iteraciones.

IV. RESULTADOS: MEDIDAS Y SIMULACIONES

El modelo de FET individual se utilizó para simular el consumo de corriente por drenador del MMIC completo bajo distintas condiciones de polarización y temperatura ambiente. Los resultados de medidas y simulaciones se muestran en la figura 3.


Fig. 3. Simulación de la estructura completa del MMIC haciendo uso del
modelo electro-térmico derivado de la caracterización térmica previa
 (trazo continuo).  
Las medidas están dadas en: estrellas para
VG=-0.859V y VD=7.0V, círculos para VG=-0.951V y
VD=8.0V, y cuadrados para VD=9.0V y VG=-1.05V.


Como puede apreciarse en la figura 3 las simulaciones concuerdan con las medidas realizadas. Los resultados presentados sugieren que la caracterización térmica previamente realizada, así como el modelo de corriente de drenador dependiente de la temperatura para el FET individual, tienen la suficiente precisión como para realizar una caracterización electro-térmica útil de la estructura completa del MMIC y su montaje.
Con el modelo es posible comparar la distribución real de temperaturas que se obtiene sobre las fuentes del MMIC, con la que se consigue asumiendo un perfil de disipación de potencias constante en todas las fuentes de calor.

Fig. 3. Simulación de la distribución de temperaturas en la etapa de entrada del MMIC.   (asteriscos) distribución constante de potencia para todos los dedos (FETs), y (círculos) para el modelo electro-térmico. PDISMMIC=3.42W, VD=8.0V, VG=-0.951V y TAMB=30ºC.

V.   CONCLUSIONES

Se ha presentado un método experimental para obtener un modelo electro-térmico sencillo de amplificadores MMIC de potencia de estructura compleja. El método hace uso de una caracterización térmica previa mediante un prámetro indirecto eléctrico sensible a la temperatura. Dicha información se emplea para calcular un modelo de corriente de drenador de DC para las fuentes de calor que forman el MMIC, que acoplado a un simulador térmico proporciona una    herramienta    precisa    para    la    simulación    del comportamiento del MMIC completo bajo distintos puntos de polarización y temperatura ambiente. El método ha sido empleado para predecir el consumo por drenador de un amplificador MMIC comercial de potencia de banda X en un rango amplio de condiciones de trabajo.


Asignatura: CRF
Dujeiny J. Sánchez Q.

Extraido de: w3.iec.csic.es/URSI/.../S3.../1221%20-%20ELECTRO-T.pdf


 


Medida de la Resistencia Térmica en Amplificadores de Potencia de AsGa

Medida de la Resistencia Térmica en Amplificadores de Potencia de AsGa
Germán Torregrosa Penalva, Alberto Asensio López, Álvaro Blanco del Campo, Francisco Javier
Ortega González.

Abstract-- El tiempo medio de vida (MTTF) de los transmisores de RF depende básicamente de la temperatura de canal de los FETs de los amplificadores MMIC de potencia. Esta temperatura depende a su vez de la resistencia térmica Rth del MMIC y su montaje. Para conocer el parámetro MTTF es necesario determinar Rth con precisión. Este artículo revisa los métodos existentes propuestos para obtener Rth.

I. INTRODUCCIÓN

Actualmente son numerosos los equipos transmisores de radiofrecuencia, tanto en sistemas de comunicaciones como el LMDS, como en sistemas radar, que requieren una elevada potencia a su salida (superior a Pout>2W). La madurez que ha alcanzado la tecnología de fabricación de MMICs de AsGa hace que sea esta tecnología la empleada mayoritariamente para la producción comercial de amplificadores monolíticos de potencia, tanto en banda X como en banda Ka. El tiempo de vida MTTF (mean time to failure) de los módulos transmisores que integran MMICs de este tipo, formados por lo general por sucesivas etapas de combinación de FETs simples, viene dado por la temperatura Tch que alcanza el canal de los transistores FETs. La temperatura Tch depende de la resistencia térmica Rth del AsGa y de la Rth que presenta la estructura de montaje del MMIC utilizada.

Para aumentar el tiempo de vida basta con minimizar Tch para lo que resulta imprescindible hacer mínima Rth mediante, por ejemplo, el empleo de una aleación AuSn para fijar el MMIC a un carrier metálico que garantice una buena disipación del calor. Sin embargo, el uso de este tipo de aleaciones en aplicaciones de bajo coste es inviable. Adhesivos como el epoxy, aunque no recomendados, son en la práctica un requisito para equipos de producción industrial y bajo coste para fijar el MMIC. Este tipo de adhesivos presenta una Rth muy superior a la del AuSn. Con el fin de conocer con exactitud las prestaciones del equipo transmisor en cuanto a su MTTF, el diseñador de módulos transmisores de potencia necesita conocer con precisión cuál es la Rth de su montaje, incluyendo el material utilizado para fijar el amplificador.

En este artículo se describen distintos métodos empleados para la caracterización de la Rth de diferentes MMICs en las bandas X y Ka, fijados a un soporte metálico con resina conductora epoxy plateada.

II. EXTRACCIÓN DE LA RTH MEDIANTE MODELADO DE LOS FETS

Si se miden las curvas de continua (ID-VD como función de VG, ver fig. 1) del MMIC cuya Rth se desea calcular, para diferentes temperaturas ambiente Tamb, es posible extraer los parámetros que caracterizan al dispositivo, de acuerdo a alguno de los modelos disponibles en la literatura, en función de la temperatura.

FIGURA 1 . Curvas de continua del amplificador de Triquint TGA9083. Los ajustes
se realizaron para diferentes valores de Rth utilizando elmodelo de TOM.

La temperatura Tch en cada punto de las curvas de DC vendrá dada por la siguiente expresión:

Tch = Tamb + Pdis Rth .

En el proceso de extracción de los parámetros del modelo utilizado es posible obtener también Rth. Sin embargo en los modelos existentes la obtención precisa de Rth no es factible bien porque el modelo incluye ya un parámetro que actúa en parte como Rth, caso de δ en [1] o de Ct en [2], bien porque la dependencia con la temperatura no está correctamente planteada [3].

III. EXTRACCIÓN DE LA RTH MEDIANTE SIMULACIÓN NUMÉRICA


Otra manera de predecir la Rth consiste en resolver el problema integro-diferencial del flujo de calor haciendo uso de herramientas [4], como los elementos finitos o las diferencias finitas, para la estructura de materiales del MMIC y montaje en cuestión y para unas condiciones de frontera determinadas. Sin embargo la precisión de este tipo de estimaciones de la Rth está muy condicionada por el desconocimiento por parte del diseñador del sistema transmisor tanto de la estructura interna del amplificador de potencia, como de la dependencia de las propiedades de los materiales empleados con la temperatura [5].

IV. EXTRACCIÓN DE LA RTH MEDIANTE MÉTODOS INDIRECTOS

Los métodos indirectos más comúnmente utilizados para medir la Rth son el método del cristal líquido y los rayos infrarrojos. El método del cristal líquido, aparte de adolecer de cierto grado de subjetividad en la medida, puede alterar las propiedades térmicas del MMIC y es invasivo, y por tanto no apto para dispositivos caros. La medida mediante infrarrojos [6] requiere un equipo caro y complejo, y además su precisión en la determinación de Rth está íntimamente relacionada con la resolución espacial del equipo de medida.

V. EXTRACCIÓN DE LA RTH MEDIANTE MÉTODOS DIRECTOS

La Rth del amplificador también se puede obtener mediante la medida directa de un parámetro del MMIC cuya variación con la temperatura se conoce ( α = f (T ) ). Dicho parámetro α se mide en dos condiciones distintas de potencia disipada, pero es necesario que la temperatura del dispositivo en ambos casos sea la misma, para lo cual es evidente que la medida precisa una rápida conmutación entre ambos estados. De dichas medidas se puede calcular la Rth como sigue:


En [7]  el  parámetro α  utilizado es  la  resistividad de  la metalización de puerta del FET. Su principal inconveniente reside en que es necesaria una topología concreta de FET que no es la habitual en MMICs comerciales de potencia. En [8] el parámetro utilizado es la propia corriente de drenador ID.

El método directo tradicionalmente empleado [9] hace uso de la dependencia de la unión Schottky puerta-fuente en directa con la temperatura. Este método no es aplicable sin embargo en amplificadores con elevadas IDSS. Otro tanto le ocurre al método propuesto en [10] que realiza una medida parecida de la misma unión Schottky empleando para ello sólo medidas de DC, sin utilizar ninguna conmutación entre estados de distinta Pdis.

Finalmente mencionar que haciendo uso tanto de medidas en continua como pulsadas, también es posible el cálculo de la Rth, ya sea bien utilizando como parámetro de medida la ganancia  en  pequeña  señal  del  amplificador  [11]  o,  de nuevo, ID [12].

VI.  CONCLUSIONES

Se  han planteado distintos métodos para  la  obtención o medida de la resistencia térmica de amplificadores MMICs de    potencia    indicando    sus    puntos    fuertes    y    sus inconvenientes.

REFERENCIAS
[1]        An Improved GaAs MESFET Model for SPICE. A. J. McCamant, G. D. McVormack, D. H. Smith. IEEE TMTT, Vol 38, No 6, 1990.
[2]        An  Accurate  Large-Signal  Model  of  GaAs  MESFET  Which Accounts for Charge Conservation, Dispersion, and Self-Heating. C. Wei, Y. Tkachenko, D. Bartle. IEEE TMTT, Vol 46, No 11, 1998.
[3]        Modeling   of   Frequency  and   Temperature   Effects   in   GaAs MESFETs. P. C. Canfield, S. C. F. Lam, D. J. Allstot. IEEE JSSC, Vol 25, No 1, 1990.
[4]    TXYZ  Program  for  Semiconductor  IC  Thermal  Analysis.  J.
Albers. 1984.
[5]        Electrical and Thermal Characterization of MESFETs, HEMTs, and HBTs. R. Anholt. Artech House Inc., 1995.
[6]        Thermal Resistance Measurement by IR Scanning. L. G. Walshak and W. E. Poole. Microwave Journal, February, 1977.
[7]    A  DC  Technique  for  Determining  GaAs  MESFET  Thermal
Resistance. D. B. Estreich. IEEE TCHMT, Vol. 12, No. 4, 1989.
[8]        A  Novel  Non-Destructive  Method  for  Assessing  the  Thermal Resistance of Power GaAs RF-MMIC Amplifiers. R. Petersen, W De Ceuninck, L. De Scepper. High Frequency Postgraduate Student Colloquium, 2000.
[9]    MIL-STD-750D. Method 3104.

Asignatura: CRF
Dujeiny J. Sánchez Q.

Extraido de: http://www.docstoc.com/docs/3269041/Medida-de-la-Resistencia-T%C3%A9rmica-en-Amplificadores-de-Potencia-de

Power Amplifiers and Transmitters for RF and Microwave

Power Amplifiers and Transmitters for RF and Microwave


Frederick H. Raab, Senior Member, IEEE, Peter Asbeck, Fellow, IEEE, Steve Cripps, Senior Member, IEEE, Peter B. Kenington, Senior Member, IEEE, Zoya B. Popovic´, Fellow, IEEE, Nick Pothecary, Member, IEEE, John F. Sevic, Member, IEEE, and Nathan O. Sokal, Life Fellow, IEEE

Abstract—The generation of RF/microwave power is required not only in wireless communications, but also in applications such as jamming, imaging, RF heating, and miniature dc/dc converters. Each application has its own unique requirements for frequency, bandwidth, load, power, efficiency, linearity, and cost. RF power is generated by a wide variety of techniques, implementations, and active devices. Power amplifiers are incorporated into transmit- ters in a similarly wide variety of architectures, including linear, Kahn, envelope tracking, outphasing, and Doherty. Linearity can be improved through techniques such as feedback, feedforward, and predistortion.

Index Terms—Amplifier, Chireix, class A, class B, class C, class D, class E, class F, Doherty, envelope tracking, feedback, feedfor- ward, HF, Kahn, microwave, outphasing, power, predistortion, transmitter, UHF, VHF.


I. INTRODUCTION

A power amplifier (PA) is a circuit for converting dc-input power into a significant amount of RF/microwave output power. In most cases, a PA is not just a small-signal ampli- fier driven into saturation. There exists a great variety of dif- ferent PAs, and most employ techniques beyond simple linear amplification. A transmitter contains one or more PAs, as well as ancillary circuits such as signal generators, frequency con- verters, modulators, signal processors, linearizers, and power supplies. The classic architecture employs progressively larger PAs to boost a low-level signal to the desired output power. However, a wide variety of different architectures in essence disassemble and then reassemble the signal to permit amplifi-
cation with higher efficiency and linearity.

In the early days of wireless communication (1895–mid-1920s), RF power was generated by spark, arc, and alternator techniques. With the advent of the DeForest audion in 1907, the thermoionic vacuum tube offered a means of generating and controlling RF signals, and vacuum-tube PAs were dominant from the late 1920s through the mid-1970s. Discrete solid-state RF-power devices began to appear at the end of the 1960s with the introduction of silicon bipolar transistors such as the
2N6093 [(75-W HF single sideband (SSB)] by RCA. Their dominance in the 1980s brought about the use of lower volt- ages, higher currents, and relatively low load resistances. The 1990s saw a proliferation of a variety of new solid-state devices including HEMT, pHEMT, HFET, and HBT, using a variety of new materials such as InP, SiC, and GaN. These devices offer amplification to 100 GHz or more and are in many cases grown to order in MMIC form. The combination of digital signal processing (DSP) and microprocessor control allows widespread use of complicated feedback and predistortion techniques to improve efficiency and linearity.
Modern applications are highly varied. Frequencies from VLF through millimeter wave (MMW) are used for communi- cation, navigation, and broadcasting. Output powers vary from 10 mW in short-range unlicensed wireless systems to 1 MW in long-range broadcast transmitters. Almost every conceivable type of modulation is being used in one system or another. PAs and transmitters also find use in systems such as radar, RF heating, plasma generation, laser drivers, magnetic-resonance imaging, and miniature dc/dc converters. No single PA or transmitter technique suits all applications. Many techniques that are now coming into use were devised decades ago, but only recently made possible by advances in signal-processing and control technology.

II. LINEARITY

The need for linearity is one of the principal drivers in the design of modern PAs. Signals such as CW, FM, classical FSK, and GMSK (used in GSM) have constant envelopes (amplitudes) and, therefore, do not require linear amplifica- tion. Full-carrier amplitude modulation is best produced by high-level amplitude modulation of the final RF PA. Linear amplification is required when the signal contains both am- plitude and phase modulation. Examples include SSB voice,

Fig. 1. RF waveforms for SRRC and multicarrier signals.

vestigal-sideband television (both NTSC and HDTV), modern shaped-pulse data modulation (QAM, QPSK, CDMA), and multiple carriers (OFDM).
The requirements for both high data rates and efficient utiliza- tion of the increasingly crowded spectrum necessitates the use of shaped data pulses in modern digital signals such as QPSK, QAM, and CDMA. Most systems use raised-cosine shaping, which eliminates intersymbol interference during detection and allows the spectrum to be shaped arbitrarily close to rectangular [1]. This requires the transmission of square-root–raised-cosine (SRRC) data pulses that look much like truncated sinc functions. The resultant modulated carrier (Fig. 1) has simultaneous am- plitude and phase modulation with a peak-to-average ratio of 3–6 dB.
Applications such as cellular base-stations, satellite re- peaters, and active phased arrays require the simultaneous amplification of multiple signals. The signals can, in general, have different amplitudes, different modulations, and irregular frequency spacing. In a number of applications including HF modems and digital broadcasting, it is more convenient to use a large number of carriers with low data rates than a single carrier with a high data rate. Orthogonal frequency division multiplex (OFDM) [2] employs carriers with the same amplitude and modulation, separated in frequency so that modulation products from one carrier are zero at the frequencies of the other carriers. The resultant composite signal (Fig. 1) has a peak-to-average ratio in the range of 8–13 dB.
Distortion of the amplified signal can be caused by both am- plitude nonlinearity (such as a variable gain) or amplitude-to- phase conversion (produced, for example, by a voltage-variable capacitance). The result is splatter into adjacent channels and impairment of detection. Linearity is characterized, measured, and specified by various techniques, depending upon the spe- cific signal and application.
The carrier-to-intermodulation (C/I) ratio, compares the am- plitude of the desired output carriers to the intermodulation-dis- tortion (IMD) products [3]. Noise-power ratio (NPR) is the ratio of the notch power to the total signal power when a PA is driven by noise with a spectral notch. Adjacent channel power ratio (ACPR) compares the power in an adjacent channel to that of the signal (Fig. 2). It is currently the most widely used measure of linearity, but defined differently for each application. Error vector magnitude (EVM) is the distance between the desired and actual signal vectors.


III. EFFICIENCY

Efficiency, like linearity, is a critical factor in PA design. Three definitions of efficiency are commonly used. Drain ef- ficiency is defined as the ratio of RF-output power to dc-input

Fig. 2. ACPR offsets and bandwidths.
Fig. 3. Envelope PDFs.

Power-added efficiency (PAE) incor- porates the RF-drive power by subtracting it from the output . PAE gives a reasonable indication of PA performance when gain is high; however, it can become neg- ative for low gains. An overall efficiency such as is usable in all situations. This definition can be varied to include driver dc-input power, the power consumed by supporting cir- cuits, and anything else of interest.
The instantaneous efficiency is the efficiency at one specific output level. For most PAs, the instantaneous efficiency is highest at the peak output power (PEP) and decreases as output decreases. When amplifying signals with time-varying ampli- tudes, a useful measure of performance is the average efficiency, which is defined [4] as the ratio of the average outuput power to the average dc-input power .
The probability-density function (PDF) gives the relative amount of time an envelope spends at various amplitudes (Fig. 3). The PDF of an SRRC signal must generally be deter- mined by simulation or measurement. Multiple carriers produce random-phasor sums and, therefore, have Rayleigh-distributed envelopes. The average input and output powers are found by integrating the product of the variable of interest and the PDF of the envelope over the range of the envelope.


Fig. 4. Power-output PDFs.

Fig. 5. Single-ended PA.


The need to conserve battery power and to avoid interference to other users operating on the same frequency necessitates the transmission of signals whose peak amplitudes are well below the PEP of the transmitter. Since peak power is needed only in the worst-case links, the "backoff" is typically in the range of 10–20 dB. For a single-carrier mobile transmitter, backoff rather than envelope PDF is dominant in determining the av- erage power consumption and average efficiency. The PDF of the transmitting power (Fig. 4) depends not only upon the dis- tance, but also upon factors such as attenuation by buildings, multipath, and orientation of the mobile antenna [5].

IV. PAS

RF PAs are commonly designated as classes A–F [3]. Classes of operation differ in the method of operation, efficiency, and power-output capability. The "power-output capability" ("tran- sistor utilization factor") is defined as output power per tran- sistor normalized for peak drain voltage and current of 1 V and 1 A, respectively. The basic single-ended topology (Fig. 5) in- cludes an active device, dc feed, and output filter/matching net- work. Transformer-coupled and complementary topologies are also used. The drain voltage and current waveforms of selected ideal PAs are shown in Fig. 6.

A. RF-Power Transistors

RF PAs utilize a wide variety of active devices, including bipolar-junction transistors (BJTs), MOSFETs, JFETs (SITs), GaAs MESFETs, HEMTs, pHEMTs, and vacuum tubes [6],Fig. 6. Waveforms for ideal PAs.

Fig. 7. Efficiency as a function of output (CW).

[7]. The power-output capabilities range from tens of kilowatts for vacuum tubes to hundreds of watts for Si MOSFETs at HF and VHF to hundreds of milliwatts for InP HEMTs at MMW frequencies. Depending upon frequency and power, devices are available in packaged, chip, and MMIC form. Virtually all RF-power transistors are n-p-n or n-channel types because the greater mobility of electrons (versus holes) results in better operation at higher frequencies. While the voltages and currents differ considerably, the basic principles for power amplification are common to all devices.

B. Methods of Amplification

Class A: In class-A amplification, the transistor is in the ac- tive region at all times and acts as a current source controlled by the gate drive and bias. The drain–voltage and drain–current waveforms are sinusoids. This results in linear amplification with an output power of , where output voltage on load cannot exceed supply voltage . The dc-power input is constant, hence, the instantaneous efficiency (Fig. 7) is pro- portional to the power output and reaches 50% at PEP. The av- erage efficiency is inversely proportional to the peak-to-average ratio (e.g., 5% for 10 dB) and backoff (Fig. 8). For amplifica- tion of amplitude-modulated signals, the quiescent current can be varied in proportion to the instantaneous signal envelope. The utilization factor is 1/8. Class A offers high linearity, high gain, and operation close to the maximum operating frequency of the transistor.
Class B: The gate bias in a class-B PA is set at the threshold of conduction so the transistor is active half of the time and the drain current is a half-sinusoid. Since the amplitude of the


Fig. 8. Efficiency as a function of backoff (SRRC OQPSK).


drain current is proportional to drive amplitude, class B provides linear amplification. The instantaneous efficiency varies linearly with the RF-output voltage and reaches (78.5%) at PEP for an ideal PA. For low-level signals, class B is significantly more efficient than class A, and its average efficiency can be several times that of class A at high peak-to-average ratios (e.g.,28% versus 5% for dB). The utilization factor is the same 0.125 of class A. Class B is widely used in broad-band transformer-coupled PAs operating at HF and VHF. It is finding increasing use in microwave PAs, including experimental PAs using complementary devices.
Class C: The gate of a classical (true) class-C PA is biased below threshold so that the transistor is active for less than half of the RF cycle. Linearity is lost, but efficiency can be increased arbitrarily toward 100% by decreasing the conduction angle to- ward zero. Unfortunately, this causes the output power (utiliza- tion factor) to decrease toward zero and the drive power to in- crease toward infinity. A typical compromise is a conduction angle of 150 and an ideal efficiency of 85%. When driven into saturation, efficiency is stabilized and the output voltage is locked to supply voltage, allowing linear high-level ampli- tude modulation. Classical class C is widely used in high-power vacuum-tube transmitters, but is generally impractical for solid- state PAs.
Class D: Class-D PAs use two or more transistors as switches to generate square drain–voltage (or current) waveforms. A series-tuned output filter passes only the fun- damental-frequency component to the load, resulting in a power outputs of for the transformer-coupled configuration. Current is drawn only through the transistor that is on, resulting in a 100% efficiency for an ideal PA. The utilization factor is the highest of any PA. If the switching is sufficiently fast, efficiency is not degraded by reactance in the load.
Practical class-D PAs suffer from losses due to saturation, switching speed, and drain capacitance. Finite switching speed causes the transistors to be in their active regions while con- ducting current. Drain capacitances must be charged and dis- charged once per RF cycle, resulting in power loss that is propor- tional to [8] and increases directly with frequency. Class-D PAs with power outputs of 100 W to 1 kW are readily imple- mented at HF, but are seldom used above lower VHF because of losses associated with the drain capacitance. Recently, however, experimental class-D PAs have been tested with frequencies of operation as high as 1 GHz [9].
Class E: Class E employs a single transistor operated as a switch [10]. The drain–voltage waveform is the result of the sum of the dc and RF currents charging the drain-shunt capac- itance. In optimum class E, the drain voltage drops to zero and has zero slope just as the transistor turns on. The result is an ideal efficiency of 100%, elimination of the losses associated with charging the drain capacitance in class D, reduction of switching losses, and good tolerance of component variation. Optimum class-E operation requires a drain shunt susceptance of and a drain series reactance . It delivers a power output of for an ideal PA with a utilization factor of 0.098. Variations in load impedance and shunt suscep- tance cause the PA to deviate from optimum operation, but the degradations in performance are generally no worse than those for classes A and B.
The capability for efficient operation in the presence of signifi- cant drain capacitance makes class E useful in a number of appli- cations. High-efficiency HF PAs with power levels to 1 kW can be implemented using low-cost MOSFETs intended for switching rather than RF use [11]. Class E has been used for high-efficiency amplification at frequencies as high as -band [12].
Class F: Class F boosts both efficiency and output by using harmonic resonators in the output network to shape the drain waveforms. The voltage waveform includes one or more odd harmonics and approximates a square wave, while the current includes even harmonics and approximates a half sine wave. Al- ternately ("inverse class F"), the voltage can approximate a half sine wave and the current a square wave. As the number of har- monics increases, the efficiency of an ideal PA increases from the 50% (class A) toward unity (e.g., 0.707, 0.8165, 0.8656,
0.9045 for two, three, four, and five harmonics, respectively) and the utilization factor increases from 1/8 toward [13]. The required harmonics arise naturally from nonlinearities and saturation in the transistor. While class F requires a more com- plex output filter than other PAs, the impedances at the "virtual drain" must be correct at only a few specific frequencies.
A variety of modes of operation in-between classes C, E, and F are possible. The maximum achievable efficiency [13] de- pends upon the number of harmonics. The utilization factor de- pends upon the harmonic impedances and is highest for ideal class-F operation.


C. Load–Pull Characterization

RF-power transistors are characterized by breakdown voltages and saturated drain currents. The load impedance for maximum power results in drain voltage and current excursions from near zero to nearly the maximum values. The load impedances corre- sponding to delivery of a given amount of RF power with a speci- fied maximum drain voltage lie along parallel-resistance lines on the Smith chart. The impedances for a specified maximum cur- rent analogously follow a series-resistance line. For an ideal PA, the resultant constant-power contour is football shaped [14].
In a real PA, the "virtual drain" is embedded behind the drain capacitance and bond-wire/package inductance. Transforma- tion of the ideal drain impedance through these elements causes



Fig. 9. Example load–pull contours for 0.5-W 836-MHz PA (courtesy Focus Microwave and dBm Engineering).


the constant-power contours to become rotated and distorted. With the addition of second-order effects, the contours become elliptical. As shown in the example of Fig. 9, the power and ef- ficiency contours are not necessarily aligned, nor do maximum power and maximum efficiency necessarily occur for the same load impedance. Sets of such "load–pull" contours are widely used to facilitate design tradeoffs.
Load–pull analyses are generally iterative in nature, as changing one parameter may produce a new set of contours. A variety of different parameters can be plotted during a load–pull analysis, including not only power and efficiency, but also gain, distortion, and stability. Harmonic impedances as well as drive impedances can also be varied. The variable impedance required for load–pull testing can be obtained by mechanical, electrical, or active techniques.

D. Microwave PAs

At microwave frequencies, lumped elements (capacitors, in- ductors) become unsuitable as tuning components and are used primarily as chokes and bypasses. Matching, tuning, and fil- tering at microwave frequencies are, therefore, accomplished with distributed (transmission-line) networks. Proper operation of PAs at microwave frequencies is achieved by providing the required drain–load impedance at the fundamental and a number of harmonic frequencies.
Class F: Typically, a transmission line between the drain and load provides the fundamental-frequency drain impedance of the desired value. A stub that is a quarter-wavelength at the har- monic of interest and open at one end provides a short circuit at the opposite end. The stub is placed along the main transmis- sion line at either a quarter or a half-wavelength from the drain to create either an open or short circuit at the drain [15]. The supply voltage is fed to the drain through a half-wavelength line bypassed on the power-supply end or alternately by a lumped-el- ement choke. When multiple stubs are used, the stub for the highest controlled harmonic is placed near the drain. Stubs for lower harmonics are placed progressively further away and their lengths and impedances are adjusted to allow for interactions.

Fig. 10. x -band class-E PA.


Typically, "open" means 3–10 times the fundamental-frequency impedance, and "shorted" means no more 1/10 to 1/3 of the fun- damental-frequency impedance [13]. Dielectric resonators can be used in lieu of lumped-element traps.
A wide variety of class-F PAs have been implemented at UHF and microwave frequencies. Generally, only one or two har- monic impedances are controlled. In one -band PA [16], for example, the output circuit provides a match at the fundamental and a short circuit at the second harmonic. The third-harmonic impedance is high, but not explicitly adjusted to be open. The 3-dB bandwidth of such an output network is about 20%, and the efficiency remains within 10% of its maximum value over a bandwidth of 15%..

  Class E: The drain–shunt capacitance and series inductive reactance required for optimum class-E operation result in a drain impedance of at the fundamental frequency, at the second harmonic, and proportionately smaller capacitive reactances at higher harmonics. At mi-crowave frequencies, class-E operation is approximated by providing the drain with the fundamental-frequency impedance and preferably one or more of the harmonic impedances [17].
An example of a microwave approximation of class E that provides the correct fundamental and second-harmonic imped- ances [16], [17] is shown in Fig. 10. The stub immediately to the right of the FET is a quarter-wavelength long at the second har- monic so that the open circuit at its upper end is transformed to a short at its lower end. The line at the drain in combination with drain capacitance and inductance is also a quarter-wavelength to translate the short on its right end to an open at the virtual drain. The remaining lines provide the desired impedance at the fundamental. This circuit uses an FLK052 MESFET to produce 0.68 W at -band with a drain efficiency of 72% and PAE of 60%.
Methods exist for providing the proper impedances through the fourth harmonic [18]. However, the harmonic impedances are not critical [13], and many variations are, therefore, pos- sible. Since the transistor often has little or no gain at the higher harmonic frequencies, those impedances often have little or no effect upon performance. A single-stub match is often sufficient to provide the desired impedance at the fundamental while si- multaneously providing an adequately high impedance at the second harmonic, thus eliminating the need for an extra stub

Fig. 11. Internal view of dual-band (GSM/DCS) PA module for cellular-telephone handset (courtesy RF Micro Devices).


and reducing a portion of the losses associated with it. Most microwave class-E amplifiers operate in a suboptimum mode. Demonstrated capabilities range from 16 W with 80% efficiency at UHF (LDMOS) to 100 mW with 60% efficiency at 10 GHz [10], [17], [19].
Comparison: Classes AB and F have essentially the same saturated output power, but class F has about 15% higher effi- ciency and class E has the highest efficiency [19]. Gain com- pression occurs at a lower power level for class E than for class F. For a given efficiency, class F produces more power. For the same maximum output power, the third-order IMD products are about 10 dB lower for class F than for class E. Lower power PAs implemented with smaller RF-power devices tend to be more ef- ficient than PAs implemented with larger devices [16].

E. Examples

The PA for a 900-MHz CDMA handset is typically a single GaAs-HBT RFIC that includes a single-ended class-AB PA. Re- cently developed PA modules also include a silicon control IC that provides the base-bias reference voltage and can be com- manded to adjust the output-transistor base bias to optimize ef- ficiency while maintaining acceptably low amplifier distortion over the full ranges of temperature and output power. A typical PA module (Fig. 11) produces 28 dBm (631 mW) at full output with a PAE of 35%–50%.
The thick-film-hybrid PA module shown in Fig. 12 uses four
140-mm LDMOS FETs operating from a 26-V drain supply. The individual PAs have 11-dB power gain and are quadra- ture-combined to produce a 100-W PEP output at -band. The average output power is 40 W for EDGE and 7 W for CDMA, with an ACPR of 57 dBc for EDGE and 45 dBc for CDMA.

F. MMW PAs

Solid-state PAs for MMW frequencies (30–100 GHz) are predominantly monolithic. Most -band PAs are based upon pHEMT devices, while most -band PAs are based upon InP HEMTs. Some use is also made of HBTs at the lower MMW frequencies. Class A is used for maximum gain. Typical

Fig. 12. Thick-film hybrid s -band PA amplifier module (courtesy UltraRF).

Fig. 13. Linear transmitter architecture.

performance characteristics include 4 W with 30% PAE at-band, 250 mW with 25% PAE at -band, and 200 mW with 10% PAE at -band. Devices for operation at MMW are inherently small so large power outputs are obtained by combining the outputs of multiple low PAs in corporate or spatial power combiners.

V. TRANSMITTER ARCHITECTURES

Transmitters use as building blocks not only PAs, but a variety of other circuit elements including oscillators, mixers, low-level amplifiers, filters, matching networks, combiners, and circula- tors. The arrangement of building blocks is known as the ar- chitecture of a transmitter. The classic transmitter architecture is based upon linear PAs and power combiners. More recently, transmitters are being based upon a variety of different architec- tures including stage bypassing, Kahn, envelope tracking, out- phasing, and Doherty.

A. Linear Architecture

The conventional architecture for a linear microwave trans- mitter consists of a baseband or IF modulator, an up-converter, and a power-amplifier chain (Fig. 13). The amplifier chain con- sists of cascaded gain stages with power gains in the range of 6–20 dB. If the transmitter must produce an amplitude-modu- lated or multicarrier signal, each stage must have adequate lin- earity. This generally requires class-A amplifiers with substan- tial power backoff for all of the driver stages. The final ampli- fier (output stage) is always the most costly in terms of device size and current consumption, hence, it is desirable to operate the output stage in class B. In applications requiring very high linearity, it is necessary to use class A in spite of the lower effi- ciency.

Fig. 14. Corporate architecture with Wilkinson combiners.

B. Power Combiners

Whether to use a number of smaller PAs versus a single larger PA is one of the most basic decisions in selection of an archi- tecture [14]. Even when larger devices are available, smaller de- vices often offer higher gain, a lower matching factor (wider bandwidth), better phase linearity, and lower cost. Heat dissipa- tion is more readily accomplished with a number of small de- vices, and a soft-failure mode becomes possible. On the other hand, the increase in parts count, assembly time, and physical size are significant disadvantages to the use of multiple, smaller devices. In the corporate architecture (Fig. 14), po wer is split and combined in steps of two. Hybrid combiners isolate the two PAs from each other and allow one to continue operating if the other fails. Quadrature combiners insert a 90 phase shift at the input of one PA and a 90 phase shift at the output of the other. This provides a constant input impedance, cancellation of odd harmonics, and cancellation of backward-I MD (IMD resulting from a signal entering the output port). In addition, the effect of load impedance upon the system output is greatly reduced (e.g., to 1.2 dB for a 3 : 1 SWR). The Wilkinson combiner is fabricated using quarter-wavelength lines and can be extended to include more than two inputs or outputs.

C. Stage Bypassing and Gate Switching

Stage-bypassing and gate-switching techniques reduce power consumption and increase efficiency by switching between large and s mall amplifiers (e.g., the driver) according to peak signal level. This can significantly increase the transmitter efficiency when operating well into backoff, as shown in Fig. 8 ("GS") for ideal class-B PAs. These techniques are particularly effective for mobile handsets that operate over a large dynamic range, and improvement of the average efficiency from 2.1% to 9.5% has been demonstrated [20].

D. Kahn Technique

The Kahn envelope elimination and restoration (EER) tech- nique (Fig. 15) combines a highly efficient, but nonlinear RF PA with a highly efficient envelope amplifier to implement a high-efficiency linear RF PA. In its classic form, a limiter elimi- nates the envelope, allowing the constant-amplitude phase mod- ulated carrier to be amplified efficiently by class-C, class-D, class-E, or class-F RF PAs. Amplitude modulation of the final RF PA restores the envelope to the phase-modulated carrier cre- ating an amplified replica of the input signal. EER is based upon the principle that any narrow-band signal can be produced by simultaneous amplitude (envelope) and phase modulations. In a modern implementation, both the


Fig. 15. Kahn-technique transmitter.

Fig. 16. Class-S modulator.

E. Envelope Tracking

The envelope-tracking architecture is similar to that of the Kahn technique. The supply voltage is varied dynamically to conserve power, but with sufficient excess ("headroom") to allow the RF PA to operate in a linear mode. The RF drive contains both amplitude and phase information, and the burden of providing linear amplification lies entirely on the final RF PA. Typically, the envelope is detected and used to control a dc–dc converter. While both buck (step-down) or boost (step-up) con- verters are used, the latter is more common as it allows operation of the RF PA from a supply voltage higher than the dc-supply voltage. This configuration is also more amenable to the use of n-p-n or n-channel transistors for fast switching. The result is a minimum corresponding to the dc-supply voltage and tracking of larger envelopes with a fixed headroom. If the RF PA is operated in class A, its quiescent current can also be varied..
The efficiency is significantly better than that of a linear RF PA operating from a fixed supply voltage, but lower than that of the Kahn technique. The efficiency of a system based upon an ideal converter and class-B RF PA with headroom that is 10% of peak is included in Fig. 7 ("ET"). In practice, power consumption by the converter and other circuits further reduces the efficiency at lower output amplitudes.
A high switching frequency in the dc–dc converter allows both a high modulation bandwidth and the use of smaller induc- tors and capacitors. Converters with switching frequencies of 10–20 MHz have recently been implemented using MOS ASICs [24], GaAs HBTs [25], and RF-power MOSFETs [26]. The av- erage efficiency for CDMA signals is typically increased from that of a conventional linear amplifier by a factor of 1.5–2.

F. Outphasing

Outphasing was invented by Chireix during the 1930s as a means of obtaining high-quality AM from vacuum tubes with poor linearity and was used through about 1970 in RCA "am- pliphase" AM-broadcast transmitters. In the 1970s, it came into use at microwave frequencies under the name LINC (i.e., linear amplification using nonlinear components). An outphasing transmitter (Fig. 17) produces an amplitude-modulated signal by combining the outputs of two PAs driven with signals of different time-varying phases. Basically, the phase modulation causes the instantaneous vector sum of the two PA outputs to follow the desired signal amplitude. The inverse sine of envelope phase modulates the driving signals for the two PAs to produce a transmitter output that is proportional to . In a modern implementation, a DSP and synthesizer produce the inverse-sine modulations of the driving signals.
Virtually all microwave outphasing systems in use today em- ploy hybrid combiners to isolate the two PAs from each other and to allow them to see resistive loads at all signal levels. How- ever, both PAs deliver full power all of the time. Consequently, the efficiency of a hybrid-coupled outphasing transmitter varies with the output power (as in a class-A PA), resulting in an av- erage efficiency that is inversely proportional to peak-to-average ratio (as in class A). Recovery of the power from the dump port


Fig. 17. Chireix-outphasing transmitter.


of the hybrid combiner offers some improvement in the effi- ciency. Summation of the out-of-phase signals in a nonhybrid com-biner inherently results in variable reactive PA-load impedances. If the combiner is untuned, the current drawn from the PAs is proportional to the transmitter-output voltage, resulting in an ef- ficiency characteristic that varies with signal amplitude, as in a similar class-B PA. The Chireix technique uses shunt reactances on the inputs to the combiner to tune out the drain reactances at a particular amplitude, which, in turn, maximizes the efficiency in the vicinity of that amplitude. In the classic implementation, the efficiency is maximized at the level of the unmodulated AM carrier and remains high over the upper 6 dB of the output range (Fig. 7) and for about 8 dB into backoff (Fig. 8). With judicious choice of the shunt susceptances, the average efficiency can be maximized for any given signal [27]. For example, the average efficiency for a multicarrier signal with a 10-dB peak-to-average ratio can be boosted from the 28% of class B to 52.1%. Simu- lations suggest that nonhybrid combining of microwave PAs in- creases both efficiency and distortion [28].


G. Doherty Technique

The classical Doherty architecture (Fig. 18) combines two PAs of equal capacity through quarter-wavelength lines or net- works. The "carrier" (main) PA is biased in class B, while the "peaking" (auxiliary) PA is biased in class C. Only the carrier PA is active when the signal amplitude is half or less of the PEP amplitude. Both PAs contribute output power when the signal amplitude is larger than half of the PEP amplitude.
Operation of the Doherty system can be understood by dividing it into low-power, medium-power (load-modulation), and peak-power regions [29]. In the low-power region, the peaking PA remains cut off and appears as an open circuit. The carrier PA, therefore, sees a 100- load and operates as an ordinary class-B amplifier. The instantaneous efficiency increases linearly with output, reaching the 78.5% of ideal class B at saturation of the carrier PA at 6 dB from transmitter PEP. As the signal amplitude increases into the medium-power re- gion, the peaking PA becomes active. The additional current sent to the load by the peaking PA causes the apparent load impedance at to increase above the 25 of the low-power region. Transformation through the quarter-wavelength line re- sults in a decrease in the load presented to the carrier PA. The


Fig. 18. Doherty transmitter.


carrier PA remains in saturation and acts as a voltage source. It operates at peak efficiency and delivers an increasing amount of power. At PEP output, both PAs see 50- loads and each de- livers half of the system output power. The PEP efficiency is ideally the 78.5% of class-B PAs.
The classical power division approximately maximizes the average efficiency for full-carrier AM signals, as well as modern single-carrier digital signals. The use of other power-division ratios allows the lower efficiency peak to be shifted leftward so that the average efficiency is increased for signals with higher peak-to-average ratios. For example, a transition at 36 percent of PEP voltage results in a 60% average efficiency for a Rayleigh- envelope signal with a 10-dB peak-to-average ratio, which is a factor of 2.1 improvement over class B. Doherty transmitters with unequal power division can be implemented by using dif- ferent PEP load impedances and different supply voltages in the two PAs [30].
Much recent effort has focused on accommodating nonideal effects (e.g., nonlinearity, loss, phase shift) into a Doherty ar- chitecture [31]. In a modern implementation, DSP can be used to control the drive and bias to the two PAs, resulting in more precise control and higher linearity. The power consumed by the quiescent current of the peaking amplifier is also a concern. Nonetheless, -band Doherty LDMOS transmitters exhibit an average efficiency nearly twice that of a quadrature-combined PA with the same ACPR. It is also possible to use three or more stages to keep the instantaneous efficiency relatively high over a larger dynamic range [32]. The average efficiency of a three- stage Doherty with ideal class-B PAs is 70% for a Rayleigh-en- velope signal with 10-dB peak-to-average ratio [29].

VI. LINEARIZATION

Linearization techniques are used both to improve linearity and to allow more efficient, but less linear methods of operation. The three principal types of linearization are feedback, feedfor- ward, and predistortion.

A. Feedback
Feedback linearizes the transmitter by forcing the output to follow the input. It can be applied either directly to the RF am- plifier (RF feedback) or indirectly to the modulation (envelope, phase, or and components).

In RF feedback, a portion of the RF-output signal from the amplifier is fed back to and subtracted from the RF-input signal without detection or down-conversion. The delays involved must be small to ensure stability, and the loss of gain at RF is a more significant design issue. The use of RF feedback in discrete circuits is usually restricted to HF and lower VHF frequencies, but it can be applied within MMIC devices well into the microwave region [33].
Envelope feedback reduces distortion associated with ampli- tude nonlinearity. It can be applied to either a complete trans- mitter or a single PA [33]. The RF input signal is sampled by a coupler and the envelope of the input sample is detected. The resulting envelope is then fed to one input of a differential am- plifier, which subtracts it from a similarly obtained sample of the RF output. The difference signal, representing the error between the input and output envelopes, is used to drive a modulator in the main RF path. This modulator modifies the envelope of the RF signal, which drives the RF PA. The envelope of the resulting output signal is, therefore, linearized to a degree determined by the loop gain of the feedback process. For a VHF BJT amplifier in which amplitude nonlinearity is dominant, two-tone IMD is typically reduced by 10 dB.
The polar loop overcomes the fundamental inability of en- velope feedback to correct for AM-PM distortion by adding a phase-locked loop to the envelope feedback system. Envelope detection and phase comparison generally take place at the IF. For a narrow-band VHF PA, the improvement in two-tone IMD is typically around 30 dB. The envelope bandwidth must be at least twice the RF bandwidth, but the phase bandwidth must be at least ten times the RF bandwidth.
The Cartesian-feedback technique overcomes the problems associated with the wide bandwidth of the signal phase by ap- plying modulation feedback in and (Cartesian) compo- nents. Since the and components are the natural outputs of a modern DSP, the Cartesian loop is widely used in mobile- radio systems. Two identical feedback processes operate inde- pendently on the and channels (Fig. 19). The inputs are ap- plied to differential integrators (in the case of a first-order loop) and the resulting difference (error) signals are quadrature-up- converted to drive the PA. A sample of the output from the PA is attenuated and down-converted in quadrature and synchro- nously with the up-conversion process. The resulting quadrature feedback signals then form the second inputs to the input differ- ential integrators, completing the two feedback loops. The phase shifter shown in the up-converter local-oscillator path is used to align the phases of the up- and down-conversion processes. The use of Cartesian feedback with a class-C PA amplifying an IS-136 (DAMPS) signal improves the first ACPR by 35 dB and the allows the signal to be produced with an efficiency of 60% [33].

B. Feedforward
The very wide bandwidths (10–100 MHz) required in multi- carrier applications can render feedback and DSP impractical. In such cases, the feedforward technique can be used to reduce distortion by 20–40 dB. In its basic form (Fig. 20), a feedfor- ward amplifier consists of two amplifiers (the main and error amplifiers), directional couplers, delay lines, and loop control




networks [34]. The directional couplers are used for power split- ting/combining, and the delay lines ensure operation over a wide bandwidth. Loop-control networks, which consist of amplitude- and phase-shifting networks, maintain signal and distortion can- cellation within the various feedforward loops.
The input signal is first split into two paths, with one path going to the high-power main amplifier, while the other signal path goes to a delay element. The output signal from the main amplifier contains both the desired signal and distortion. This signal is sampled and scaled using attenuators before being combined with the delayed portion of the input signal, which is regarded as distortion free. The resulting "error signal" ideally contains only the distortion components in the output of the main amplifier. The error signal is then amplified by the low-power high-linearity error amplifier, and then combined with a delayed version of the main amplifier output. This second combination ideally cancels the distortion components in the main-amplifier output while leaving the desired signal unaltered.
Successful isolation of an error signal and the removal of distortion components depend upon precise signal cancellation over a band of frequencies. For a 30-dB cancellation depth, the amplitudes must be matched within 0.22 dB and the phases within 1.2 [34]. For manufactured equipment, realistic values of distortion cancellation are around 25–30 dB. The limiting factor is nearly always the bandwidth over which a given ac- curacy can be obtained.
The outputs of the main and error amplifiers are typically combined in a directional coupler that both isolates the PAs from each other and provides resistive input impedances. For a typ- ical 10-dB coupling ratio, 90% of the power from the main PA reaches the output. For the same coupling ratio, only 10% of the power from the error amplifier reaches the load, thus the error amplifier must produce ten times the power of the distortion in the main amplifier. The peak-to-average ratio of the error signal is often much higher than that of the desired signal, making am- plification of the error signal inherently much less efficient than that of the main signal. As a result, the power consumed by the error amplifier can be a significant fraction (e.g., one-third) of that of the main amplifier. In addition, it may be necessary to operate one or both amplifiers well into backoff to improve lin- earity. The overall average efficiency of a feedforward trans- mitter may, therefore, be only 10%–15% for typical multicarrier signals.
Since feedforward is inherently an open-loop process, changes in device characteristics over time, temperature, voltage, and signal level degrade the amplitude and phase matching and, therefore, increase distortion in the transmitter



output. An automatic control scheme continuously adjusts the gain and phase to achieve the best signal cancellation and output linearity. The first step is to use FFT techniques, direct power measurement, or pilot signals to determine how well the loop is balanced. Both digital and analog techniques can be used for loop control and adjustment.

C. Predistortion
The basic concept of a predistortion system (Fig. 21) involves the insertion of a nonlinear element prior to the RF PA such that the combined transfer characteristic of both is linear. Predistor- tion can be accomplished at either RF or baseband.
An RF predistorter typically creates the expansive predistor- tion characteristic by subtracting a compressive transfer func- tion (such as that of a diode) from a linear transfer function. Improvements in the ACPR by 10 dB are typical. As with feed- forward, the operating bandwidth is limited by the gain and phase flatness of the predistorter itself and of the RF PA. In addition, memory effects in the PA and the predistorter limit the degree of cancellation. Better performance can be achieved with more complex forms of RF predistortion such as Adaptive Parametric Linearization (APL), which is capable of multiorder correction [33]. Most RF-predistortion techniques are capable of broad-band operation with practical operational bandwidths similar to, or greater than, those of feedforward.

D. Digital Predistortion
Digital predistortion techniques exploit the considerable pro- cessing power now available from DSP devices, which allows them both to form and to update the required predistortion char- acteristic. They can operate with analog-baseband, digital-base- band, analog-IF, digital-IF, or analog-RF input signals. Digital- baseband and digital-IF processing are most common. The two most common types of digital predistorter are termed "mapping predistorters" and "constant-gain predistorters."
A constant-gain predistorter (Fig. 22) requires only a single-dimensional lookup table, indexed by the signal envelope to generate the expansive predistortion characteristic. It is simple to implement and requires only a modest amount of memory for a given level of performance and adaption time. A mapping pre- distorter utilizes two lookup tables, each of which is a function of the and components of the input. This type of predis- torter is capable of excellent performance. However, it requires a significant storage and/or processing overhead for the lookup tables and their updating mechanism, and has a low speed of convergence.
An example of linearization of a PA with two 3G W-CDMA signals by a digital baseband-input predistorter is shown in Fig. 23. The linearized amplifier meets the required spectral mask with a comfortable margin at all frequency offsets. The noise floor is set by the degree of clipping employed on the waveform, which limits the ACPR improvement obtained. It clearly demonstrates, however, that digital predistortion can be used in broad-band, as well as narrow-band applications. Fig. 24 shows an example of a commercial 3G transmitter with digital predistortion.

VII. EMERGING TECHNIQUES

The ever-increasing demands for more bandwidth, coupled with requirements for both high linearity and high efficiency create ever-increasing challenges in the design of PAs and trans- mitters. These problems are especially acute in base-station and satellite transmitters, where multiple carriers must be amplified simultaneously, resulting in peak-to-average ratios of 10–13 dB and bandwidths of 30–100 MHz. A number of emerging tech- niques may prove useful in these applications in the near future.


Fig. 23.   Linearization of 3G W-CDMA PA signal by digital baseband-input predisorter (courtesy WSI).

RF pulsewidth modulation (RF PWM) varies the duty ratio of a class-D RF PA to produce an output signal with a time-varying envelope. The amplitude of the output is proportional to the in- verse sine of the pulsewidth. The spurious products associated with PWM are located in the vicinity of the harmonics of the carrier and, therefore, do not limit the modulation bandwidth.
Delta-sigma modulation also directly modulates the carrier produced by a class-D RF PA [35]. The PA is driven at a fixed clock rate (hence, fixed pulsewidth) that is generally higher than
the carrier frequency. The polarity is toggled by a quantizer so that the average carrier amplitude is the desired value. The quan- tizer forces most of the quantizing noise to fall outside of the signal band where it can be removed by a narrow-band output filter.
Carrier PWM drives the RF PA with bursts of the RF car- rier frequency. The width of the bursts is varied in proportion to the instantaneous output amplitude. A narrow-band output filter passes the desired average carrier amplitude and rejects the side- bands associated with the burst frequency. While the process is analogous to that in a class-S modulator, the burst frequency can be 100 MHz or more to accommodate wide-band signals.
Electronic tuning [36] allows frequency agility, matching of unknown and variable loads, and amplitude modulation. Components for electronic tuning include p-i-n diode switches, MEMS switches, MEMS capacitors, semiconductor capacitors, ceramic capacitors (e.g., BST), and bias-controlled inductors. "Load modulation" uses an electronically tuned output filter to vary load impedance and thereby the instantaneous amplitude of the output signal. The modulation bandwidth can be quite wide, as it is limited only by the bias feeds to the tuning com- ponents. With judicious choice of the impedance locus used in the modulation process, the efficiency remains high over most of the dynamic range, resulting in average efficiencies three times those of a class-B PA.


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Asignatura: CRF
Dujeiny J. Sánchez Q

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